D40C1 npn silicon darlington power transistor description: the central semiconductor D40C1 type is an npn silicon darlington power transistor designed for general purpose amplifier applications where high gain is required. marking: full part number maximum ratings: (t c =25c) symbol units collector-emitter voltage v ces 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 13 v continuous collector current i c 0.5 a peak collector current i cm 1.0 a power dissipation p d 6.25 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance jc 20 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i ces v ce =30v 500 na i cbo v ce =30v, t c =150c 20 a i ebo v eb =13v 100 na bv ceo l c =10ma 30 v v ce(sat) l c =500ma, i b =0.5ma 1.5 v v be(sat) l c =500ma, i b =0.5ma 2.0 v h fe v ce =5.0v, i c =200ma 10k 70k f t v ce =5.0v, l c =20ma 80 mhz c cb v cb =10v, f=1.0mhz 10 pf t on l c =1.0a, i b1 =1.0ma 120 ns t off l c =1.0a, i b1 =i b2 =1.0ma 1200 ns to-202 case r1 (23-january 2012) www.centralsemi.com
D40C1 npn silicon darlington power transistor lead code: 1) emitter 2) base 3) collector tab is common to pin 3 marking: full part number to-202 case - mechanical outline www.centralsemi.com r1 (23-january 2012)
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